AO4407A
Produktcode: 190829
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Weitere Produktangebote AO4407A nach Preis ab 0.26 EUR bis 2.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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AO4407A | UMW |
Transistor P-Channel MOSFET; 30V; 25V; 18,5mOhm; 14A; 3,1W; -55°C ~ 150°C; Equivalent: AO4407A Alpha&Omega Semiconductor AOS; AO4407A UMW TAO4407a UMW Anzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4407A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V |
auf Bestellung 74427 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4407A | ALPHA&OMEGA |
Transistor P-Channel MOSFET; 30V; 25V; 17mOhm; 12A; 3,1W; -55°C ~ 150°C; AO4407A TAO4407a Anzahl je Verpackung: 50 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4407A | ALPHA&OMEGA |
Transistor P-Channel MOSFET; 30V; 25V; 17mOhm; 12A; 3,1W; -55°C ~ 150°C; AO4407A TAO4407a Anzahl je Verpackung: 50 Stücke |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4407A | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 13mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhancement |
auf Bestellung 1740 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4407A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V |
auf Bestellung 74573 Stücke: Lieferzeit 10-14 Tag (e) |
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| AO4407A |
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Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 25V; 18,5mOhm; 14A; 3,1W; -55°C ~ 150°C; Equivalent: AO4407A Alpha&Omega Semiconductor AOS; AO4407A UMW TAO4407a UMW
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 18,5mOhm; 14A; 3,1W; -55°C ~ 150°C; Equivalent: AO4407A Alpha&Omega Semiconductor AOS; AO4407A UMW TAO4407a UMW
Anzahl je Verpackung: 100 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.46 EUR |
| AO4407A |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Description: MOSFET P-CH 30V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
auf Bestellung 74427 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.56 EUR |
| 6000+ | 0.52 EUR |
| 9000+ | 0.5 EUR |
| 15000+ | 0.48 EUR |
| 21000+ | 0.46 EUR |
| 30000+ | 0.44 EUR |
| AO4407A |
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Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 25V; 17mOhm; 12A; 3,1W; -55°C ~ 150°C; AO4407A TAO4407a
Anzahl je Verpackung: 50 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 17mOhm; 12A; 3,1W; -55°C ~ 150°C; AO4407A TAO4407a
Anzahl je Verpackung: 50 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.71 EUR |
| AO4407A |
|
Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 25V; 17mOhm; 12A; 3,1W; -55°C ~ 150°C; AO4407A TAO4407a
Anzahl je Verpackung: 50 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 17mOhm; 12A; 3,1W; -55°C ~ 150°C; AO4407A TAO4407a
Anzahl je Verpackung: 50 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.71 EUR |
| AO4407A |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 230+ | 0.37 EUR |
| 286+ | 0.3 EUR |
| 317+ | 0.27 EUR |
| 500+ | 0.26 EUR |
| AO4407A |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Description: MOSFET P-CH 30V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
auf Bestellung 74573 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |