AO4421 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 60V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
auf Bestellung 411000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.51 EUR |
| 6000+ | 0.48 EUR |
| 9000+ | 0.45 EUR |
| 30000+ | 0.44 EUR |
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Technische Details AO4421 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 6.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V.
Weitere Produktangebote AO4421 nach Preis ab 0.35 EUR bis 1.53 EUR
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AO4421 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 60V 6.2A 8-Pin SOIC |
auf Bestellung 1122 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4421 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 6.2A 8-Pin SOIC |
auf Bestellung 1122 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4421 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 22.7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5585 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4421 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 22.7nC Kind of channel: enhanced |
auf Bestellung 5585 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4421 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 60V 6.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V |
auf Bestellung 413247 Stücke: Lieferzeit 10-14 Tag (e) |
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| AO4421 | Hersteller : ALPHA&OMEGA |
P-MOSFET 6.2A 60V 3.1W 0.04Ω AO4421 TAO4421 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4421 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 6.2A 8-Pin SOIC |
Produkt ist nicht verfügbar |
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AO4421 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 6.2A 8-Pin SOIC |
Produkt ist nicht verfügbar |