AO4485 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AO4485 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 10A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 20 V.
Weitere Produktangebote AO4485 nach Preis ab 0.49 EUR bis 2.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AO4485 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 10A 8-Pin SOIC T/R |
auf Bestellung 405000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
AO4485 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 10A 8-Pin SOIC T/R |
auf Bestellung 405000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
AO4485 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 10A 8-Pin SOIC T/R |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
AO4485 | Hersteller : UMW |
Description: SOP-8 MOSFETS ROHSPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 20 V |
auf Bestellung 537 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
AO4485 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 10A 8-Pin SOIC T/R |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
AO4485 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 10A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 20 V |
auf Bestellung 13992 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| AO4485 | Hersteller : UMW |
Transistor P-Channel MOSFET; 40V; 20V; 20mOhm; 10A; 1,7W; -55°C ~ 150°C; Equivalent: AO4485 Alpha&Omega Semiconductor AOS; AO4485 UMW TAO4485 UMWAnzahl je Verpackung: 50 Stücke |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| AO4485 | Hersteller : UMW |
Transistor P-Channel MOSFET; 40V; 20V; 20mOhm; 10A; 1,7W; -55°C ~ 150°C; Equivalent: AO4485 Alpha&Omega Semiconductor AOS; AO4485 UMW TAO4485 UMWAnzahl je Verpackung: 60 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| AO4485 | Hersteller : Alpha? Semiconductor |
N-канальний ПТ, Udss, В = 40, Id = 10 А, Ciss, пФ @ Uds, В = 3000 @ 20, Qg, нКл = 55 @ 10 В, Rds = 15 мОм @ 10 A, 10 В, Ugs(th) = 2,5 В @ 250 мкА, Р, Вт = 1,7, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOICN-8 Од. вим: Anzahl je Verpackung: 1 Stücke |
verfügbar 1057 Stücke: |
||||||||||||||||
|
AO4485 Produktcode: 206193
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
|
|||||||||||||||||
|
AO4485 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 10A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| AO4485 | Hersteller : AOS |
P-Channel 40 V 10A (Ta) 1.7W (Ta) Surface Mount 8-SOIC Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||||||||||||||||
|
AO4485 | Hersteller : UMW |
Description: SOP-8 MOSFETS ROHSPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||||||||
|
AO4485 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8A; 1.1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 18.6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |


