AO4486

AO4486 Alpha & Omega Semiconductor Inc.


AOSGreenPolicy.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AO4486 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 100V 4.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V.

Weitere Produktangebote AO4486 nach Preis ab 0.45 EUR bis 2.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AO4486 AO4486 Hersteller : UMW AO4486.PDF Description: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V
auf Bestellung 1416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
27+0.67 EUR
30+0.6 EUR
100+0.52 EUR
250+0.49 EUR
500+0.47 EUR
1000+0.45 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 AO4486 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AO4486.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 151mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1131 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
72+1 EUR
123+0.58 EUR
139+0.52 EUR
147+0.49 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 AO4486 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AO4486.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 151mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
auf Bestellung 1131 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
123+0.58 EUR
139+0.52 EUR
147+0.49 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 AO4486 Hersteller : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 100V 4.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V
auf Bestellung 7079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.29 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 Hersteller : ALPHA&OMEGA AOSGreenPolicy.pdf AO4486.PDF Transistor N-Channel MOSFET; 100V; 20V; 151mOhm; 4,2A; 3,1W; -55°C ~ 150°C; AO4486 TAO4486
Anzahl je Verpackung: 25 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+0.83 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 AO4486
Produktcode: 164324
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AOSGreenPolicy.pdf AO4486.PDF Transistoren > MOSFET N-CH
Gehäuse: SOIC-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 AO4486 Hersteller : Alpha & Omega Semiconductor ao4486.pdf Trans MOSFET N-CH 100V 4.2A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 AO4486 Hersteller : Alpha & Omega Semiconductor ao4486.pdf Trans MOSFET N-CH 100V 4.2A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO4486 AO4486 Hersteller : UMW AO4486.PDF Description: SOP-8 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH