AO4892

AO4892 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F34DB55AF1CA50&compId=AO4892-DTE.pdf?ci_sign=9373b705a2a2d7593c0c686c8fd1a9ee0abd384e Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
auf Bestellung 2990 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
236+0.3 EUR
269+0.27 EUR
295+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 81
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Technische Details AO4892 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET 2N-CH 100V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V, Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

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AO4892 Hersteller : ALPHA&OMEGA AO4892.pdf Transistor 2xN-Channel MOSFET; 100V; 20V; 126mOhm; 4A; 2W; -55°C ~ 150°C; AO4892 TAO4892
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+0.75 EUR
Mindestbestellmenge: 50
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AO4892 AO4892 Hersteller : Alpha & Omega Semiconductor ao4892.pdf Trans MOSFET N-CH 100V 4A 8-Pin SOIC T/R
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AO4892 AO4892 Hersteller : Alpha & Omega Semiconductor Inc. AO4892.pdf Description: MOSFET 2N-CH 100V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH