Technische Details AO4924 AO
Description: MOSFET 2N-CH 30V 8SOIC, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V, Rds On (Max) @ Id, Vgs: 15.8mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote AO4924
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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AO4924 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET 2N-CH 30V 8SOICOperating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Rds On (Max) @ Id, Vgs: 15.8mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
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| AO4924 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2N-CH 30V 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH