AO6601

AO6601 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F34E74621BEA50&compId=AO6601-DTE.pdf?ci_sign=0bf0e6fe11f16d8391cf6bcd45b144234c68d0e1 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: TSOP6
Mounting: SMD
Gate charge: 4.7/2.8nC
On-state resistance: 60/115mΩ
Power dissipation: 0.73W
Drain current: 2.7/-1.8A
Gate-source voltage: ±12V
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3046 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
228+0.31 EUR
455+0.16 EUR
516+0.14 EUR
589+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AO6601 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N/P-CH 30V 3.4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP.

Weitere Produktangebote AO6601 nach Preis ab 0.11 EUR bis 0.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AO6601 AO6601 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F34E74621BEA50&compId=AO6601-DTE.pdf?ci_sign=0bf0e6fe11f16d8391cf6bcd45b144234c68d0e1 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: TSOP6
Mounting: SMD
Gate charge: 4.7/2.8nC
On-state resistance: 60/115mΩ
Power dissipation: 0.73W
Drain current: 2.7/-1.8A
Gate-source voltage: ±12V
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
auf Bestellung 3046 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
455+0.16 EUR
516+0.14 EUR
589+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
AO6601 AO6601 Hersteller : Alpha & Omega Semiconductor 174ao6601.pdf Trans MOSFET N/P-CH 30V 3.4A/2.3A 6-Pin TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO6601 AO6601 Hersteller : Alpha & Omega Semiconductor ao6601.pdf Trans MOSFET N/P-CH 30V 3.4A/2.3A 6-Pin TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO6601 AO6601 Hersteller : Alpha & Omega Semiconductor Inc. AO6601.pdf Description: MOSFET N/P-CH 30V 3.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH