Technische Details AO6704 AO
Description: MOSFET N-CH 30V 3.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.6A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.39W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 15 V.
Weitere Produktangebote AO6704
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
AO6704 | Hersteller : AO | SOT-23 |
auf Bestellung 1158 Stücke: Lieferzeit 21-28 Tag (e) |
||
AO6704 | Hersteller : AO | TSOP-6 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
||
AO6704 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 3.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.6A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 15 V |
Produkt ist nicht verfügbar |
||
AO6704 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 3.6A 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.6A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 15 V |
Produkt ist nicht verfügbar |