AOB14N50

AOB14N50 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB752F1EE898FCD56BB5CC53D7&compId=AOB14N50.pdf?ci_sign=4f04b87072ddc27d225178451db93d0a22cf1708 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 771 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
107+0.67 EUR
114+0.63 EUR
132+0.54 EUR
148+0.49 EUR
157+0.46 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOB14N50 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 500V 14A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V.

Weitere Produktangebote AOB14N50 nach Preis ab 0.46 EUR bis 0.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOB14N50 AOB14N50 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE898FCD56BB5CC53D7&compId=AOB14N50.pdf?ci_sign=4f04b87072ddc27d225178451db93d0a22cf1708 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
114+0.63 EUR
132+0.54 EUR
148+0.49 EUR
157+0.46 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
AOB14N50 AOB14N50 Hersteller : Alpha & Omega Semiconductor aot14n50.pdf Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 155200 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOB14N50 AOB14N50 Hersteller : Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 500V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOB14N50 AOB14N50 Hersteller : Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 500V 14A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH