AOB14N50 Alpha & Omega Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.74 EUR |
| 65600+ | 1.56 EUR |
| 131200+ | 1.42 EUR |
| 196800+ | 1.31 EUR |
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Technische Details AOB14N50 Alpha & Omega Semiconductor
Description: MOSFET N-CH 500V 14A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V.
Weitere Produktangebote AOB14N50 nach Preis ab 2.08 EUR bis 12.15 EUR
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AOB14N50 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 263200 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB14N50 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 278W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 51nC Kind of channel: enhancement |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB14N50 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 263200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 4.02 EUR |
| 4000+ | 3.53 EUR |
| 8000+ | 3.2 EUR |
| 12000+ | 2.89 EUR |
| 20000+ | 2.57 EUR |
| 24000+ | 2.27 EUR |
| 100000+ | 2.08 EUR |
| AOB14N50 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.15 EUR |



