AOC3862 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BB42F6D57820&compId=AOC3862.pdf?ci_sign=5961194d0ea8e9ab8c58d9ea892710edd8f483a0 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Gate charge: 46nC
Anzahl je Verpackung: 5000 Stücke
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Technische Details AOC3862 ALPHA & OMEGA SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 12V, Power dissipation: 2.5W, Case: DFN6, Gate-source voltage: ±8V, On-state resistance: 3mΩ, Mounting: SMD, Kind of channel: enhancement, Semiconductor structure: common drain, Version: ESD, Gate charge: 46nC, Anzahl je Verpackung: 5000 Stücke.

Weitere Produktangebote AOC3862

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AOC3862 Hersteller : Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
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AOC3862 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BB42F6D57820&compId=AOC3862.pdf?ci_sign=5961194d0ea8e9ab8c58d9ea892710edd8f483a0 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Gate charge: 46nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH