AOC3868 Alpha & Omega Semiconductor
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Technische Details AOC3868 Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Semiconductor structure: common drain, Case: DFN6, Kind of channel: enhancement, Version: ESD, Type of transistor: N-MOSFET x2, Mounting: SMD, Polarisation: unipolar, Gate charge: 35nC, On-state resistance: 5mΩ, Power dissipation: 2.5W, Gate-source voltage: ±8V, Drain-source voltage: 12V, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote AOC3868
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AOC3868 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Case: DFN6 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 35nC On-state resistance: 5mΩ Power dissipation: 2.5W Gate-source voltage: ±8V Drain-source voltage: 12V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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AOC3868 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Case: DFN6 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 35nC On-state resistance: 5mΩ Power dissipation: 2.5W Gate-source voltage: ±8V Drain-source voltage: 12V |
Produkt ist nicht verfügbar |