AOCA24106E Alpha & Omega Semiconductor Inc.


AOCA24106E.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
auf Bestellung 7980 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
14+1.27 EUR
100+0.99 EUR
500+0.84 EUR
1000+0.68 EUR
2000+0.64 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOCA24106E Alpha & Omega Semiconductor Inc.

Description: MOSFET 2N-CH 12V 20A 6ALPHADFN, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-AlphaDFN (1.9x1.6).

Weitere Produktangebote AOCA24106E

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOCA24106E Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3B56A0BA4473820&compId=AOCA24106E.pdf?ci_sign=a595c295a280f69bf1ebad1793a63ddf4c429fe6 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Case: DFN6
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.7W
Polarisation: unipolar
Version: ESD
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOCA24106E Hersteller : Alpha & Omega Semiconductor Inc. AOCA24106E.pdf Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOCA24106E Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3B56A0BA4473820&compId=AOCA24106E.pdf?ci_sign=a595c295a280f69bf1ebad1793a63ddf4c429fe6 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Case: DFN6
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.7W
Polarisation: unipolar
Version: ESD
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH