AOD11S60

AOD11S60 Alpha & Omega Semiconductor Inc.


AOD11S60.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.59 EUR
5000+ 1.53 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details AOD11S60 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 600V 11A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.

Weitere Produktangebote AOD11S60 nach Preis ab 1.68 EUR bis 3.54 EUR

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Preis ohne MwSt
AOD11S60 AOD11S60 Hersteller : Alpha & Omega Semiconductor Inc. AOD11S60.pdf Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
auf Bestellung 10786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.54 EUR
10+ 2.94 EUR
100+ 2.34 EUR
500+ 1.98 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 5
AOD11S60 AOD11S60 Hersteller : Alpha & Omega Semiconductor aoi11s60.pdf Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
AOD11S60 AOD11S60 Hersteller : Alpha & Omega Semiconductor aoi11s60.pdf Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
AOD11S60 Hersteller : ALPHA & OMEGA SEMICONDUCTOR aod11s60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOD11S60 Hersteller : ALPHA & OMEGA SEMICONDUCTOR aod11s60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
Produkt ist nicht verfügbar