AOD2610E ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO252
Mounting: SMD
Case: TO252
Power dissipation: 23.5W
Drain-source voltage: 60V
Drain current: 36.5A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 172+ | 0.42 EUR |
| 225+ | 0.32 EUR |
| 237+ | 0.3 EUR |
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Technische Details AOD2610E ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 60V 46A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
Weitere Produktangebote AOD2610E nach Preis ab 0.3 EUR bis 0.47 EUR
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AOD2610E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO252 Mounting: SMD Case: TO252 Power dissipation: 23.5W Drain-source voltage: 60V Drain current: 36.5A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD2610E | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 46A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD2610E | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 46A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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AOD2610E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
Produkt ist nicht verfügbar |
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AOD2610E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
Produkt ist nicht verfügbar |