Produkte > ALPHA & OMEGA SEMICONDUCTOR > AOD3N50
AOD3N50

AOD3N50 ALPHA & OMEGA SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819636835B598259&compId=AOD3N50.pdf?ci_sign=98cb5a784ecf15141048f128d845a68d93ad707a Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.8A; 57W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhancement
auf Bestellung 1554 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
157+0.46 EUR
175+0.41 EUR
197+0.36 EUR
500+0.34 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOD3N50 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 500V 2.8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V.

Weitere Produktangebote AOD3N50 nach Preis ab 0.34 EUR bis 1.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOD3N50 AOD3N50 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819636835B598259&compId=AOD3N50.pdf?ci_sign=98cb5a784ecf15141048f128d845a68d93ad707a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.8A; 57W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1554 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
82+0.87 EUR
157+0.46 EUR
175+0.41 EUR
197+0.36 EUR
500+0.34 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
AOD3N50 AOD3N50 Hersteller : Alpha & Omega Semiconductor Inc. AOD3N50.pdf Description: MOSFET N-CH 500V 2.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.07 EUR
100+0.7 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
AOD3N50 Hersteller : ALPHA&OMEGA AOD3N50.pdf Transistor N-Channel MOSFET; 500V; 30V; 3Ohm; 2,8A; 57W; -50°C ~ 150°C; AOD3N50 TAOD3n50
Anzahl je Verpackung: 50 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.46 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
AOD3N50 AOD3N50 Hersteller : Alpha & Omega Semiconductor 169613903220115aou3n50.pdf Trans MOSFET N-CH 500V 2.8A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOD3N50 AOD3N50 Hersteller : Alpha & Omega Semiconductor 169613903220115aou3n50.pdf Trans MOSFET N-CH 500V 2.8A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOD3N50 AOD3N50 Hersteller : Alpha & Omega Semiconductor Inc. AOD3N50.pdf Description: MOSFET N-CH 500V 2.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH