AOD444
Produktcode: 45678
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Lieblingsprodukt
Hersteller:
Gehäuse: D-Pak (TO-252)
Drain-Source-Spannung Uds, V: 60 V
Drain-Strom Idd, A: 12 A
Durchlasswiderstand Rds(on), Ohm: 0,06 Ohm
Montage: SMD
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Weitere Produktangebote AOD444 nach Preis ab 0.31 EUR bis 2.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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AOD444 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 4A/12A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V |
auf Bestellung 66200 Stücke: Lieferzeit 10-14 Tag (e) |
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AOD444 | ALPHA&OMEGA |
Transistor: N-MOSFET; unipolar; 60V; 30A; 20W; TO252 AOD444 TAOD444 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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AOD444 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 20W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 20W Case: TO252 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhancement |
auf Bestellung 2233 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD444 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 4A/12A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V |
auf Bestellung 66358 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD444 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 66200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.52 EUR |
| 5000+ | 0.49 EUR |
| 7500+ | 0.46 EUR |
| 12500+ | 0.44 EUR |
| 17500+ | 0.43 EUR |
| 25000+ | 0.42 EUR |
| AOD444 |
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Hersteller: ALPHA&OMEGA
Transistor: N-MOSFET; unipolar; 60V; 30A; 20W; TO252 AOD444 TAOD444
Anzahl je Verpackung: 50 Stücke
Transistor: N-MOSFET; unipolar; 60V; 30A; 20W; TO252 AOD444 TAOD444
Anzahl je Verpackung: 50 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.69 EUR |
| AOD444 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 20W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 20W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 20W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 20W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
auf Bestellung 2233 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 131+ | 0.65 EUR |
| 218+ | 0.39 EUR |
| 242+ | 0.36 EUR |
| 500+ | 0.31 EUR |
| AOD444 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 66358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.3 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |