AOD4N60 ALPHA&OMEGA
Hersteller: ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 2,3Ohm; 4A; 104W; -50°C ~ 150°C; AOD4N60 TAOD4n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 2.3 EUR |
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Technische Details AOD4N60 ALPHA&OMEGA
Description: MOSFET N-CH 600V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V.
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AOD4N60 Produktcode: 126928
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AOD4N60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R |
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AOD4N60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R |
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AOD4N60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R |
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AOD4N60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 104W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Power dissipation: 104W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
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AOD4N60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
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AOD4N60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
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AOD4N60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 104W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Power dissipation: 104W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |