AOD5B60D Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 23A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.26 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details AOD5B60D Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 23A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 98 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 12ns/82ns, Switching Energy: 140µJ (on), 40µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.4 nC, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 54.4 W.
Weitere Produktangebote AOD5B60D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
AOD5B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 21.7W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Collector-emitter saturation voltage: 1.55V Turn-off switching energy: 0.04mJ Turn-on switching energy: 0.14mJ Turn-on time: 27ns Turn-off time: 124ns |
auf Bestellung 4569 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOD5B60D |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 21.7W
Case: TO252
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
Turn-on time: 27ns
Turn-off time: 124ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 21.7W
Case: TO252
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
Turn-on time: 27ns
Turn-off time: 124ns
auf Bestellung 4569 Stücke:
Lieferzeit 14-21 Tag (e)


