AOD5B60D ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 21.7W
Case: TO252
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Turn-off time: 124ns
Turn-on time: 27ns
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
Collector-emitter saturation voltage: 1.55V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2202 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 95+ | 0.76 EUR |
| 99+ | 0.73 EUR |
| 100+ | 0.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOD5B60D ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 23A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 98 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 12ns/82ns, Switching Energy: 140µJ (on), 40µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.4 nC, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 54.4 W.
Weitere Produktangebote AOD5B60D nach Preis ab 0.72 EUR bis 2.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AOD5B60D | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 21.7W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Turn-off time: 124ns Turn-on time: 27ns Turn-off switching energy: 0.04mJ Turn-on switching energy: 0.14mJ Collector-emitter saturation voltage: 1.55V |
auf Bestellung 2202 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
AOD5B60D | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 23A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 12ns/82ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 54.4 W |
auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
AOD5B60D | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 10A 54400mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
 |
AOD5B60D | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 23A 54.4W 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOD5B60D | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 23A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 12ns/82ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 54.4 W |
Produkt ist nicht verfügbar |