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AOD5B65N1

AOD5B65N1 ALPHA & OMEGA SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BC2AD49E5820&compId=AOD5B65N1.pdf?ci_sign=f5da393a2bf6da2e7379d7d218790e930682d558 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
Case: TO252
Mounting: SMD
Pulsed collector current: 15A
Turn-on time: 23ns
Turn-off time: 114ns
Type of transistor: IGBT
Collector-emitter saturation voltage: 2.5V
Power dissipation: 21W
Gate-emitter voltage: ±30V
Kind of package: reel; tape
Gate charge: 9.2nC
Turn-on switching energy: 0.081mJ
Turn-off switching energy: 0.049mJ
Collector current: 5A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2450 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
72+1.00 EUR
106+0.68 EUR
119+0.60 EUR
121+0.59 EUR
128+0.56 EUR
250+0.55 EUR
2500+0.54 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOD5B65N1 ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 650V 5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 170 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 8ns/73ns, Switching Energy: 81µJ (on), 49µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.2 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 52 W.

Weitere Produktangebote AOD5B65N1 nach Preis ab 0.55 EUR bis 1.00 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOD5B65N1 AOD5B65N1 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BC2AD49E5820&compId=AOD5B65N1.pdf?ci_sign=f5da393a2bf6da2e7379d7d218790e930682d558 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
Case: TO252
Mounting: SMD
Pulsed collector current: 15A
Turn-on time: 23ns
Turn-off time: 114ns
Type of transistor: IGBT
Collector-emitter saturation voltage: 2.5V
Power dissipation: 21W
Gate-emitter voltage: ±30V
Kind of package: reel; tape
Gate charge: 9.2nC
Turn-on switching energy: 0.081mJ
Turn-off switching energy: 0.049mJ
Collector current: 5A
Collector-emitter voltage: 650V
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1.00 EUR
106+0.68 EUR
119+0.60 EUR
121+0.59 EUR
128+0.56 EUR
250+0.55 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
AOD5B65N1 AOD5B65N1 Hersteller : Alpha & Omega Semiconductor Inc. AOD5B65N1.pdf Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8ns/73ns
Switching Energy: 81µJ (on), 49µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.2 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
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