AOD600A70R

AOD600A70R Alpha & Omega Semiconductor Inc.


AOD600A70R.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 4607 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.02 EUR
100+1.36 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOD600A70R Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 700V 8.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.

Weitere Produktangebote AOD600A70R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOD600A70R Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOD600A70R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; Idm: 34A; 104W; TO252
Mounting: SMD
Drain-source voltage: 700V
Drain current: 8.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 34A
Case: TO252
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOD600A70R AOD600A70R Hersteller : Alpha & Omega Semiconductor Inc. AOD600A70R.pdf Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOD600A70R Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOD600A70R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; Idm: 34A; 104W; TO252
Mounting: SMD
Drain-source voltage: 700V
Drain current: 8.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 34A
Case: TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH