AOE6936 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 35/67A; 9.6/15W; DFN5x6
Power dissipation: 9.6/15W
Polarisation: unipolar
Case: DFN5x6
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
On-state resistance: 5/2mΩ
Drain current: 35/67A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1848 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 65+ | 1.1 EUR |
| 75+ | 0.96 EUR |
| 84+ | 0.86 EUR |
| 88+ | 0.82 EUR |
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Technische Details AOE6936 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 55A/85A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 24W, 39W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Weitere Produktangebote AOE6936 nach Preis ab 0.82 EUR bis 2.41 EUR
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AOE6936 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 35/67A; 9.6/15W; DFN5x6 Power dissipation: 9.6/15W Polarisation: unipolar Case: DFN5x6 Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 On-state resistance: 5/2mΩ Drain current: 35/67A Drain-source voltage: 30V Semiconductor structure: asymmetric |
auf Bestellung 1848 Stücke: Lieferzeit 14-21 Tag (e) |
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AOE6936 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A/85A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 39W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
auf Bestellung 2915 Stücke: Lieferzeit 10-14 Tag (e) |
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AOE6936 транзистор Produktcode: 199060 |
Transistoren > MOSFET N-CH |
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AOE6936 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 55A/85A 8-Pin DFN EP T/R |
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AOE6936 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A/85A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 39W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |