AOK015V65X2 ALPHA & OMEGA SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W, Mounting: THT, Case: TO247-3, Power dissipation: 312W, Gate charge: 152nC, Polarisation: unipolar, Technology: SiC, Drain current: 67A, Kind of channel: enhancement, Drain-source voltage: 650V, Type of transistor: N-MOSFET, Gate-source voltage: -5...15V, Kind of package: tube, On-state resistance: 23mΩ, Pulsed drain current: 200A.