AOK033V120X2Q

AOK033V120X2Q Alpha & Omega Semiconductor Inc.


AOK033V120X2Q.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 214 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.83 EUR
10+25.47 EUR
25+23.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOK033V120X2Q Alpha & Omega Semiconductor Inc.

Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V, Power Dissipation (Max): 300W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 17.5mA, Supplier Device Package: TO-247, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V, Qualification: AEC-Q101.

Weitere Produktangebote AOK033V120X2Q

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOK033V120X2Q Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOK033V120X2Q.pdf AOK033V120X2Q THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH