Technische Details AOK40B65H2AL Alpha & Omega Semiconductor
Description: IGBT 650V 80A TO-247, Power - Max: 260 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 61 nC, Test Condition: 600V, 40A, 7.5Ohm, 15V, Switching Energy: 1.17mJ (on), 540µJ (off), Td (on/off) @ 25°C: 30ns/117ns, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Reverse Recovery Time (trr): 315 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote AOK40B65H2AL
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AOK40B65H2AL | Hersteller : Alpha & Omega Semiconductor Inc. |
 Description: IGBT 650V 80A TO-247Power - Max: 260 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Gate Charge: 61 nC Test Condition: 600V, 40A, 7.5Ohm, 15V Switching Energy: 1.17mJ (on), 540µJ (off) Td (on/off) @ 25°C: 30ns/117ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Reverse Recovery Time (trr): 315 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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AOK40B65H2AL | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Mounting: THT Turn-on time: 64ns Turn-off time: 152ns Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ Kind of package: tube Case: TO247 Collector-emitter saturation voltage: 2.05V Gate-emitter voltage: ±30V Collector current: 40A Power dissipation: 105W Pulsed collector current: 120A Collector-emitter voltage: 650V Type of transistor: IGBT Gate charge: 61nC |
Produkt ist nicht verfügbar |