AOK40B65H2AL

AOK40B65H2AL ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BD7128997820&compId=AOK40B65H2AL.pdf?ci_sign=c188b98fff4fdf619559cf9ddfcb6973f330431b Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Case: TO247
Mounting: THT
Pulsed collector current: 120A
Turn-on time: 64ns
Turn-off time: 152ns
Type of transistor: IGBT
Collector-emitter saturation voltage: 2.05V
Power dissipation: 105W
Gate-emitter voltage: ±30V
Kind of package: tube
Gate charge: 61nC
Turn-on switching energy: 1.17mJ
Turn-off switching energy: 0.54mJ
Collector current: 40A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.55 EUR
32+2.29 EUR
41+1.74 EUR
44+1.66 EUR
Mindestbestellmenge: 29
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Technische Details AOK40B65H2AL ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 650V 80A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 315 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 30ns/117ns, Switching Energy: 1.17mJ (on), 540µJ (off), Test Condition: 600V, 40A, 7.5Ohm, 15V, Gate Charge: 61 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.

Weitere Produktangebote AOK40B65H2AL nach Preis ab 1.66 EUR bis 2.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOK40B65H2AL AOK40B65H2AL Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BD7128997820&compId=AOK40B65H2AL.pdf?ci_sign=c188b98fff4fdf619559cf9ddfcb6973f330431b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Case: TO247
Mounting: THT
Pulsed collector current: 120A
Turn-on time: 64ns
Turn-off time: 152ns
Type of transistor: IGBT
Collector-emitter saturation voltage: 2.05V
Power dissipation: 105W
Gate-emitter voltage: ±30V
Kind of package: tube
Gate charge: 61nC
Turn-on switching energy: 1.17mJ
Turn-off switching energy: 0.54mJ
Collector current: 40A
Collector-emitter voltage: 650V
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
32+2.29 EUR
41+1.74 EUR
44+1.66 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
AOK40B65H2AL AOK40B65H2AL Hersteller : Alpha & Omega Semiconductor aok40b65h2al.pdf Trans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOK40B65H2AL AOK40B65H2AL Hersteller : Alpha & Omega Semiconductor aok40b65h2al.pdf Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOK40B65H2AL AOK40B65H2AL Hersteller : Alpha & Omega Semiconductor Inc. AOK40B65H2AL.pdf Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 315 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH