AOK40B65H2AL ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.05 EUR |
| 34+ | 2.57 EUR |
| 38+ | 2.28 EUR |
| 40+ | 2.13 EUR |
| 60+ | 2.07 EUR |
| 90+ | 2.05 EUR |
| 150+ | 2.01 EUR |
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Produktbewertung abgeben
Technische Details AOK40B65H2AL ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 650V 80A TO-247, Power - Max: 260 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 61 nC, Test Condition: 600V, 40A, 7.5Ohm, 15V, Switching Energy: 1.17mJ (on), 540µJ (off), Td (on/off) @ 25°C: 30ns/117ns, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Reverse Recovery Time (trr): 315 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote AOK40B65H2AL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOK40B65H2AL | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
AOK40B65H2AL | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 80A TO-247 Power - Max: 260 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Gate Charge: 61 nC Test Condition: 600V, 40A, 7.5Ohm, 15V Switching Energy: 1.17mJ (on), 540µJ (off) Td (on/off) @ 25°C: 30ns/117ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Reverse Recovery Time (trr): 315 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOK40B65H2AL |
|
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B65H2AL |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 61 nC
Test Condition: 600V, 40A, 7.5Ohm, 15V
Switching Energy: 1.17mJ (on), 540µJ (off)
Td (on/off) @ 25°C: 30ns/117ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 315 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 80A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 61 nC
Test Condition: 600V, 40A, 7.5Ohm, 15V
Switching Energy: 1.17mJ (on), 540µJ (off)
Td (on/off) @ 25°C: 30ns/117ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 315 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH