AOM015V65X2 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V
Power Dissipation (Max): 312W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 24mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 39.78 EUR |
| 10+ | 28.82 EUR |
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Technische Details AOM015V65X2 Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V, Power Dissipation (Max): 312W (Tj), Vgs(th) (Max) @ Id: 3.5V @ 24mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 67A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 200A Anzahl je Verpackung: 1 Stücke |
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| AOM015V65X2 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 67A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 200A |
Produkt ist nicht verfügbar |