AOM015V65X2 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 24mA
Power Dissipation (Max): 312W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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Technische Details AOM015V65X2 Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +15V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.5V @ 24mA, Power Dissipation (Max): 312W (Tj), Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote AOM015V65X2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AOM015V65X2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W Mounting: THT Case: TO247-4 Polarisation: unipolar Pulsed drain current: 200A Drain current: 67A Drain-source voltage: 650V Gate-source voltage: -5...15V Gate charge: 152nC On-state resistance: 23mΩ Power dissipation: 312W Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOM015V65X2 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Pulsed drain current: 200A
Drain current: 67A
Drain-source voltage: 650V
Gate-source voltage: -5...15V
Gate charge: 152nC
On-state resistance: 23mΩ
Power dissipation: 312W
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Pulsed drain current: 200A
Drain current: 67A
Drain-source voltage: 650V
Gate-source voltage: -5...15V
Gate charge: 152nC
On-state resistance: 23mΩ
Power dissipation: 312W
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH