AOM015V65X2 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V
Power Dissipation (Max): 312W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 24mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.34 EUR |
| 10+ | 34.3 EUR |
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Technische Details AOM015V65X2 Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V, Power Dissipation (Max): 312W (Tj), Vgs(th) (Max) @ Id: 3.5V @ 24mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V.
Weitere Produktangebote AOM015V65X2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AOM015V65X2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 67A Power dissipation: 312W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 23mΩ Mounting: THT Gate charge: 152nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 200A Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
AOM015V65X2 | Alpha & Omega Semiconductor |
SiC Silicon Carbide Power MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOM015V65X2 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 67A
Power dissipation: 312W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 152nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 200A
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 67A
Power dissipation: 312W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 152nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 200A
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOM015V65X2 |
|
Hersteller: Alpha & Omega Semiconductor
SiC Silicon Carbide Power MOSFET
SiC Silicon Carbide Power MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH