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AOM060V65X2

AOM060V65X2 Alpha & Omega Semiconductor Inc.

AOM060V65X2.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.53 EUR
10+11.39 EUR
240+7.75 EUR
Mindestbestellmenge: 2
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Technische Details AOM060V65X2 Alpha & Omega Semiconductor Inc.

Description: 650V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 6mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V.

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AOM060V65X2 AOM060V65X2 Hersteller : Alpha & Omega Semiconductor aom060v65x2.pdf SiC Silicon Carbide Power MOSFET
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