AOM065V120X2 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Produktrezensionen
Produktbewertung abgeben
Technische Details AOM065V120X2 Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V, Power Dissipation (Max): 187.5W (Tj), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V.
Weitere Produktangebote AOM065V120X2 nach Preis ab 14.38 EUR bis 17.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AOM065V120X2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W Mounting: THT Case: TO247-4 Polarisation: unipolar Pulsed drain current: 85A Drain current: 29.6A Drain-source voltage: 1.2kV Gate-source voltage: -5...15V Gate charge: 62.3nC On-state resistance: 90mΩ Power dissipation: 187.5W Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
|
| AOM065V120X2 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Pulsed drain current: 85A
Drain current: 29.6A
Drain-source voltage: 1.2kV
Gate-source voltage: -5...15V
Gate charge: 62.3nC
On-state resistance: 90mΩ
Power dissipation: 187.5W
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Pulsed drain current: 85A
Drain current: 29.6A
Drain-source voltage: 1.2kV
Gate-source voltage: -5...15V
Gate charge: 62.3nC
On-state resistance: 90mΩ
Power dissipation: 187.5W
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.53 EUR |
| 6+ | 15.72 EUR |
| 10+ | 14.64 EUR |
| 30+ | 14.38 EUR |