AOM065V120X2 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Drain-source voltage: 1.2kV
Drain current: 29.6A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 187.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62.3nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...15V
Pulsed drain current: 85A
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 237 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 15.89 EUR |
| 6+ | 12.60 EUR |
| 100+ | 12.33 EUR |
| 240+ | 12.11 EUR |
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Technische Details AOM065V120X2 ALPHA & OMEGA SEMICONDUCTOR
Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V, Power Dissipation (Max): 187.5W (Tj), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V.
Weitere Produktangebote AOM065V120X2 nach Preis ab 12.33 EUR bis 23.55 EUR
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AOM065V120X2 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W Drain-source voltage: 1.2kV Drain current: 29.6A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 187.5W Polarisation: unipolar Kind of package: tube Gate charge: 62.3nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 85A Mounting: THT Case: TO247-4 |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
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AOM065V120X2 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: 1200V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V Power Dissipation (Max): 187.5W (Tj) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOM065V120X2 | Hersteller : Alpha & Omega Semiconductor |
SiC Silicon Carbide Power MOSFET |
Produkt ist nicht verfügbar |