AON2408

AON2408 Alpha & Omega Semiconductor Inc.


AON2408.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
auf Bestellung 33000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.34 EUR
9000+ 0.31 EUR
30000+ 0.3 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details AON2408 Alpha & Omega Semiconductor Inc.

Description: MOSFET N CH 20V 8A DFN 2X2B, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-DFN (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V.

Weitere Produktangebote AON2408 nach Preis ab 0.4 EUR bis 1.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AON2408 AON2408 Hersteller : Alpha & Omega Semiconductor Inc. AON2408.pdf Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
auf Bestellung 38051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
20+ 0.9 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
AON2408 AON2408 Hersteller : Alpha & Omega Semiconductor aon2408.pdf Trans MOSFET N-CH 20V 8A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
AON2408 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AON2408.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; 1.8W; DFN2x2B
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Power dissipation: 1.8W
Case: DFN2x2B
Gate-source voltage: ±12V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AON2408 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AON2408.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; 1.8W; DFN2x2B
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Power dissipation: 1.8W
Case: DFN2x2B
Gate-source voltage: ±12V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar