AON3611 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Case: DFN8
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 30/-30V
Drain current: 3.8/-4.7A
On-state resistance: 50/38mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.3/1.6W
Polarisation: unipolar
Gate charge: 2/4.6nC
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 468+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| 625+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AON3611 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N/P-CH 30V 5A/6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, 6A, Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (3x3), Part Status: Active.
Weitere Produktangebote AON3611 nach Preis ab 0.11 EUR bis 1.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AON3611 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Case: DFN8 Mounting: SMD Semiconductor structure: common drain Drain-source voltage: 30/-30V Drain current: 3.8/-4.7A On-state resistance: 50/38mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.3/1.6W Polarisation: unipolar Gate charge: 2/4.6nC Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
AON3611 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 5A/6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 6A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
AON3611 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 5A/6A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 6A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
auf Bestellung 20678 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
AON3611 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 30V 5A/6A 8-Pin DFN |
Produkt ist nicht verfügbar |