AON6262E

AON6262E Alpha & Omega Semiconductor Inc.


AON6262E.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.67 EUR
6000+0.63 EUR
9000+0.61 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AON6262E Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 60V 40A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V.

Weitere Produktangebote AON6262E nach Preis ab 0.77 EUR bis 2.52 EUR

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AON6262E AON6262E Hersteller : Alpha & Omega Semiconductor Inc. AON6262E.pdf Description: MOSFET N-CH 60V 40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
auf Bestellung 9984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.59 EUR
100+1.06 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AON6262E AON6262E Hersteller : Alpha & Omega Semiconductor 174300079817427aon6262e.pdf Trans MOSFET N-CH 60V 40A 8-Pin DFN EP T/R
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AON6262E AON6262E Hersteller : Alpha & Omega Semiconductor aon6262e.pdf Trans MOSFET N-CH 60V 40A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON6262E AON6262E Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BF31AD86F820&compId=AON6262E.pdf?ci_sign=a74da665bb293d54ba64d026f13ac8ac272f12a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 19W; DFN5x6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 19W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON6262E AON6262E Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BF31AD86F820&compId=AON6262E.pdf?ci_sign=a74da665bb293d54ba64d026f13ac8ac272f12a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 19W; DFN5x6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 19W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH