AON6362 Alpha & Omega Semiconductor
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.38 EUR |
| 9000+ | 0.36 EUR |
| 15000+ | 0.35 EUR |
| 24000+ | 0.33 EUR |
| 30000+ | 0.31 EUR |
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Technische Details AON6362 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 27A/60A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V.
Weitere Produktangebote AON6362 nach Preis ab 0.3 EUR bis 0.94 EUR
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AON6362 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 30V 27A 8-Pin DFN EP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6362 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 13W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 13W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1517 Stücke: Lieferzeit 7-14 Tag (e) |
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AON6362 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 13W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 13W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced |
auf Bestellung 1517 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6362 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 27A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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AON6362 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 27A/60A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON6362 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 27A/60A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V |
Produkt ist nicht verfügbar |