AON6482 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 5.5A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.89 EUR |
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Technische Details AON6482 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5.5A/28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V.
Weitere Produktangebote AON6482 nach Preis ab 0.76 EUR bis 2.09 EUR
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AON6482 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 25W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 25W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5772 Stücke: Lieferzeit 7-14 Tag (e) |
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AON6482 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 25W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 25W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
auf Bestellung 5772 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6482 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 5.5A/28A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
auf Bestellung 5986 Stücke: Lieferzeit 10-14 Tag (e) |
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AON6482 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 28A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |