Produkte > ALPHA & OMEGA SEMICONDUCTOR > AON6482
AON6482

AON6482 ALPHA & OMEGA SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BFB1D2235820&compId=AON6482.pdf?ci_sign=148525fe5ebd7c541cd854e81f8f0b99b88e766d Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 25W; DFN5x6
Case: DFN5x6
Mounting: SMD
Drain current: 18A
Drain-source voltage: 100V
Gate charge: 34nC
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of channel: enhancement
Polarisation: unipolar
auf Bestellung 5620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
78+0.93 EUR
100+0.83 EUR
250+0.78 EUR
500+0.72 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AON6482 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 100V 5.5A/28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V.

Weitere Produktangebote AON6482 nach Preis ab 0.72 EUR bis 2.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AON6482 AON6482 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BFB1D2235820&compId=AON6482.pdf?ci_sign=148525fe5ebd7c541cd854e81f8f0b99b88e766d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 25W; DFN5x6
Case: DFN5x6
Mounting: SMD
Drain current: 18A
Drain-source voltage: 100V
Gate charge: 34nC
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of channel: enhancement
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5620 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
74+0.97 EUR
78+0.93 EUR
100+0.83 EUR
250+0.78 EUR
500+0.72 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
AON6482 AON6482 Hersteller : Alpha & Omega Semiconductor Inc. AON6482.pdf Description: MOSFET N-CH 100V 5.5A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 1257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.79 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AON6482
Produktcode: 207558
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AON6482.pdf Transistoren > MOSFET N-CH
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AON6482 AON6482 Hersteller : Alpha & Omega Semiconductor aon6482.pdf Trans MOSFET N-CH 100V 28A 8-Pin DFN EP T/R
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AON6482 AON6482 Hersteller : Alpha & Omega Semiconductor aon6482.pdf Trans MOSFET N-CH 100V 28A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON6482 AON6482 Hersteller : Alpha & Omega Semiconductor Inc. AON6482.pdf Description: MOSFET N-CH 100V 5.5A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH