AON6816 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 30V 17A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.65 EUR |
6000+ | 0.62 EUR |
9000+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AON6816 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A, Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V, Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active.
Weitere Produktangebote AON6816 nach Preis ab 0.69 EUR bis 1.58 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AON6816 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
auf Bestellung 45331 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
AON6816 | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 16A 8-Pin DFN EP |
Produkt ist nicht verfügbar |
||||||||||||||
AON6816 | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 16A 8-Pin DFN EP |
Produkt ist nicht verfügbar |
||||||||||||||
AON6816 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 13A; 8W; DFN5x6B Drain-source voltage: 30V Drain current: 13A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 8W Polarisation: unipolar Gate charge: 19.7nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
AON6816 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 13A; 8W; DFN5x6B Drain-source voltage: 30V Drain current: 13A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 8W Polarisation: unipolar Gate charge: 19.7nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6B |
Produkt ist nicht verfügbar |