Weitere Produktangebote AON6996
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AON6996 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 31/38A; 8.3/8.6W; DFN5x6 Case: DFN5x6 Mounting: SMD Semiconductor structure: asymmetric On-state resistance: 5.2/3.9mΩ Power dissipation: 8.3/8.6W Gate charge: 13nC Polarisation: unipolar Drain current: 31/38A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V; ±20V |
auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AON6996 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/38A; 8.3/8.6W; DFN5x6
Case: DFN5x6
Mounting: SMD
Semiconductor structure: asymmetric
On-state resistance: 5.2/3.9mΩ
Power dissipation: 8.3/8.6W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31/38A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V; ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/38A; 8.3/8.6W; DFN5x6
Case: DFN5x6
Mounting: SMD
Semiconductor structure: asymmetric
On-state resistance: 5.2/3.9mΩ
Power dissipation: 8.3/8.6W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31/38A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V; ±20V
auf Bestellung 1935 Stücke:
Lieferzeit 14-21 Tag (e)