AON6996

AON6996 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BFB1D2403820&compId=AON6996.pdf?ci_sign=aebd6c4128f539dd8654b5bab9efb6c53d8c1732 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/38A; 8.3/8.6W; DFN5x6
Case: DFN5x6
Mounting: SMD
On-state resistance: 5.2/3.9mΩ
Type of transistor: N-MOSFET x2
Semiconductor structure: asymmetric
Drain current: 31/38A
Power dissipation: 8.3/8.6W
Polarisation: unipolar
Gate charge: 13nC
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±12V; ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2229 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
143+0.50 EUR
160+0.45 EUR
180+0.40 EUR
187+0.38 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AON6996 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET 2N-CH 30V 50A/60A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 50A, 60A, Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6).

Weitere Produktangebote AON6996 nach Preis ab 0.38 EUR bis 0.50 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AON6996 AON6996 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1BFB1D2403820&compId=AON6996.pdf?ci_sign=aebd6c4128f539dd8654b5bab9efb6c53d8c1732 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/38A; 8.3/8.6W; DFN5x6
Case: DFN5x6
Mounting: SMD
On-state resistance: 5.2/3.9mΩ
Type of transistor: N-MOSFET x2
Semiconductor structure: asymmetric
Drain current: 31/38A
Power dissipation: 8.3/8.6W
Polarisation: unipolar
Gate charge: 13nC
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±12V; ±20V
auf Bestellung 2229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.50 EUR
160+0.45 EUR
180+0.40 EUR
187+0.38 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
AON6996
Produktcode: 174488
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AON6996.pdf Transistoren > MOSFET N-CH
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AON6996 Hersteller : Alpha & Omega Semiconductor aon6996.pdf Trans MOSFET N-CH 30V 50A/60A 8-Pin DFN-D EP T/R
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AON6996 AON6996 Hersteller : Alpha & Omega Semiconductor Inc. AON6996.pdf Description: MOSFET 2N-CH 30V 50A/60A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH