AON6998 ALPHA & OMEGA SEMICONDUCTOR
auf Bestellung 2186 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 105+ | 0.69 EUR |
| 111+ | 0.65 EUR |
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Technische Details AON6998 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 19A/26A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 19A, 26A, Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs.
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AON6998 Produktcode: 165965
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| AON6998 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 30V 19A/26A 8-Pin DFN-D EP T/R |
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AON6998 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 19A/26A 8-Pin DFN-D EP T/R |
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AON6998 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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AON6998 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
Produkt ist nicht verfügbar |