AON6998
Produktcode: 165965
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Weitere Produktangebote AON6998 nach Preis ab 0.62 EUR bis 0.63 EUR
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AON6998 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6 Case: DFN5x6 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54A Gate charge: 13nC On-state resistance: 5.2/2.6mΩ Power dissipation: 8/13W Gate-source voltage: ±12V; ±20V Semiconductor structure: asymmetric |
auf Bestellung 2082 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6998 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Part Status: Not For New Designs Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Drain to Source Voltage (Vdss): 30V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON6998 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
Produkt ist nicht verfügbar |