AON6998
Produktcode: 165965
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IC > IC Transistoranordnungen
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Weitere Produktangebote AON6998 nach Preis ab 0.74 EUR bis 0.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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AON6998 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6 Case: DFN5x6 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54A Gate charge: 13nC On-state resistance: 5.2/2.6mΩ Power dissipation: 8/13W Gate-source voltage: ±12V; ±20V Semiconductor structure: asymmetric |
auf Bestellung 2074 Stücke: Lieferzeit 14-21 Tag (e) |
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| AON6998 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54A
Gate charge: 13nC
On-state resistance: 5.2/2.6mΩ
Power dissipation: 8/13W
Gate-source voltage: ±12V; ±20V
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54A
Gate charge: 13nC
On-state resistance: 5.2/2.6mΩ
Power dissipation: 8/13W
Gate-source voltage: ±12V; ±20V
Semiconductor structure: asymmetric
auf Bestellung 2074 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.75 EUR |
| 115+ | 0.74 EUR |