AON6998
Produktcode: 165965
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Weitere Produktangebote AON6998
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AON6998 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54A Power dissipation: 8/13W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.2/2.6mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Semiconductor structure: asymmetric |
auf Bestellung 1811 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AON6998 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54A
Power dissipation: 8/13W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.2/2.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54A
Power dissipation: 8/13W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.2/2.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
auf Bestellung 1811 Stücke:
Lieferzeit 14-21 Tag (e)