AON7296 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 295+ | 0.29 EUR |
| 332+ | 0.26 EUR |
| 358+ | 0.24 EUR |
| 374+ | 0.23 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
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Technische Details AON7296 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 5A/12.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V.
Weitere Produktangebote AON7296 nach Preis ab 0.4 EUR bis 2.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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AON7296 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 5A/12.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 5A/12.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 50593 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON7296 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.46 EUR |
| AON7296 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.46 EUR |
| AON7296 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.49 EUR |
| 10000+ | 0.45 EUR |
| 15000+ | 0.43 EUR |
| 25000+ | 0.42 EUR |
| 35000+ | 0.4 EUR |
| AON7296 |
|
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296
Anzahl je Verpackung: 50 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.63 EUR |
| AON7296 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 50593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.3 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| 2000+ | 0.54 EUR |