AON7408 IC-Mikroschalter
Produktcode: 84416
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Lieblingsprodukt
Hersteller:
8542 39 90 00
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Weitere Produktangebote AON7408 IC-Mikroschalter nach Preis ab 0.14 EUR bis 0.62 EUR
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AON7408 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 4.5W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 7.1nC Kind of channel: enhancement |
auf Bestellung 2264 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7408 | Hersteller : ALPHA |
Transistor N-Channel MOSFET; 30V; 20V; 32mOhm; 18A; 11W; -55°C ~ 150°C; AON7408 TAON7408 Anzahl je Verpackung: 44 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7408 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 10A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
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AON7408 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/18A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
Produkt ist nicht verfügbar |
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AON7408 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/18A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
Produkt ist nicht verfügbar |