AON7408

AON7408 ALPHA & OMEGA SEMICONDUCTOR


AON7408-DTE.pdf Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP
Drain-source voltage: 30V
Drain current: 11.5A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Gate charge: 7.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3x3 EP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3359 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
177+0.4 EUR
343+ 0.21 EUR
388+ 0.18 EUR
444+ 0.16 EUR
469+ 0.15 EUR
Mindestbestellmenge: 177
Produktrezensionen
Produktbewertung abgeben

Technische Details AON7408 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 30V 10A/18A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), 11W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.

Weitere Produktangebote AON7408 nach Preis ab 0.15 EUR bis 0.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AON7408 AON7408 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AON7408-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP
Drain-source voltage: 30V
Drain current: 11.5A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.5W
Polarisation: unipolar
Gate charge: 7.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3x3 EP
auf Bestellung 3359 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
177+0.4 EUR
343+ 0.21 EUR
388+ 0.18 EUR
444+ 0.16 EUR
469+ 0.15 EUR
Mindestbestellmenge: 177
AON7408 Hersteller : ALPHA AOSGreenPolicy.pdf Transistor N-Channel MOSFET; 30V; 20V; 32mOhm; 18A; 11W; -55°C ~ 150°C; AON7408 TAON7408
Anzahl je Verpackung: 44 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.67 EUR
Mindestbestellmenge: 44
AON7408 IC-Mikroschalter
Produktcode: 84416
Transistoren > MOSFET N-CH
8542 39 90 00
Produkt ist nicht verfügbar
AON7408 AON7408 Hersteller : Alpha & Omega Semiconductor 467aon7408.pdf Trans MOSFET N-CH 30V 10A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
AON7408 AON7408 Hersteller : Alpha & Omega Semiconductor aon7408.pdf Trans MOSFET N-CH 30V 10A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
AON7408 AON7408 Hersteller : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 30V 10A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
AON7408 AON7408 Hersteller : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 30V 10A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar