AON7408 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 4.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3018 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 177+ | 0.40 EUR |
| 343+ | 0.21 EUR |
| 388+ | 0.18 EUR |
| 439+ | 0.16 EUR |
| 464+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AON7408 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 30V 10A/18A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), 11W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.
Weitere Produktangebote AON7408 nach Preis ab 0.15 EUR bis 0.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AON7408 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 4.5W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 7.1nC Kind of channel: enhancement |
auf Bestellung 3018 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| AON7408 | Hersteller : ALPHA |
Transistor N-Channel MOSFET; 30V; 20V; 32mOhm; 18A; 11W; -55°C ~ 150°C; AON7408 TAON7408 Anzahl je Verpackung: 44 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
AON7408 IC-Mikroschalter Produktcode: 84416
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH 8542 39 90 00 |
Produkt ist nicht verfügbar
|
|||||||||||||||
 |
AON7408 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 10A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
AON7408 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 10A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
AON7408 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/18A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
AON7408 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/18A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
Produkt ist nicht verfügbar |