AON7524 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 15 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.37 EUR |
| 10000+ | 0.34 EUR |
| 15000+ | 0.33 EUR |
| 25000+ | 0.32 EUR |
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Technische Details AON7524 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 25A/28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 15 V.
Weitere Produktangebote AON7524 nach Preis ab 0.42 EUR bis 4.22 EUR
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AON7524 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 25A/28A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 15 V |
auf Bestellung 46765 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON7524 | Hersteller : Alpha & Omega Semiconductor Inc. |
N-Channel 30 V 25A (Ta), 28A (Tc) 3.1W (Ta), 32W (Tc) Surface Mount 8-DFN-EP (3x3) |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7524 | Hersteller : Alpha & Omega Semiconductor |
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AON7524 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 12.8W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Power dissipation: 12.8W Case: DFN3x3 EP Gate-source voltage: ±12V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 16nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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AON7524 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 12.8W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Power dissipation: 12.8W Case: DFN3x3 EP Gate-source voltage: ±12V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 16nC Kind of channel: enhancement |
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