
AON7611 Alpha & Omega Semiconductor Inc.

Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
auf Bestellung 1357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
14+ | 1.34 EUR |
22+ | 0.83 EUR |
100+ | 0.54 EUR |
500+ | 0.41 EUR |
1000+ | 0.37 EUR |
Produktrezensionen
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Technische Details AON7611 Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A, Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active.
Weitere Produktangebote AON7611
Foto | Bezeichnung | Hersteller | Beschreibung |
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AON7611 | Hersteller : Alpha & Omega Semiconductor |
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AON7611 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AON7611 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-11.5A Power dissipation: 2.8/8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 38/50mΩ Mounting: SMD Gate charge: 4.6/2nC Kind of channel: enhancement Semiconductor structure: common drain Kind of transistor: complementary pair Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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AON7611 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active |
Produkt ist nicht verfügbar |
|
![]() |
AON7611 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-11.5A Power dissipation: 2.8/8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 38/50mΩ Mounting: SMD Gate charge: 4.6/2nC Kind of channel: enhancement Semiconductor structure: common drain Kind of transistor: complementary pair |
Produkt ist nicht verfügbar |