AONH36328 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
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Technische Details AONH36328 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13.8A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 23W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3).
Weitere Produktangebote AONH36328
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AONH36328 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A Power dissipation: 9.2W Mounting: SMD Polarisation: unipolar Gate charge: 11nC On-state resistance: 11.5mΩ Gate-source voltage: 16V Drain current: 18A Drain-source voltage: 30V Pulsed drain current: 40A Kind of channel: enhancement Case: DFN3x3A Type of transistor: N-MOSFET x2 Semiconductor structure: asymmetric |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONH36328 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A
Power dissipation: 9.2W
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 11.5mΩ
Gate-source voltage: 16V
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of channel: enhancement
Case: DFN3x3A
Type of transistor: N-MOSFET x2
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A
Power dissipation: 9.2W
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 11.5mΩ
Gate-source voltage: 16V
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of channel: enhancement
Case: DFN3x3A
Type of transistor: N-MOSFET x2
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH