AONH36328 ALPHA & OMEGA SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A, Semiconductor structure: asymmetric, Case: DFN3x3A, Kind of channel: enhancement, Type of transistor: N-MOSFET x2, Mounting: SMD, Gate charge: 11nC, On-state resistance: 11.5mΩ, Power dissipation: 9.2W, Gate-source voltage: 16V, Drain current: 18A, Drain-source voltage: 30V, Pulsed drain current: 40A, Polarisation: unipolar, Anzahl je Verpackung: 5000 Stücke.