AONR21117 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.6 EUR |
| 10000+ | 0.57 EUR |
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Technische Details AONR21117 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 26.5A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V, Power Dissipation (Max): 5W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V.
Weitere Produktangebote AONR21117 nach Preis ab 0.63 EUR bis 1.86 EUR
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AONR21117 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 26.5A/34A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V |
auf Bestellung 21782 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21117 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21117 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21117 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R |
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AONR21117 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 26.5A; 5W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 26.5A Power dissipation: 5W Case: DFN8 Gate-source voltage: ±8V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 88nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AONR21117 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 26.5A; 5W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 26.5A Power dissipation: 5W Case: DFN8 Gate-source voltage: ±8V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 88nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |