AONR21357

AONR21357 Alpha & Omega Semiconductor Inc.


AONR21357.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.39 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AONR21357 Alpha & Omega Semiconductor Inc.

Description: MOSFET P-CH 30V 21A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V.

Weitere Produktangebote AONR21357 nach Preis ab 0.44 EUR bis 1.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AONR21357 AONR21357 Hersteller : Alpha & Omega Semiconductor Inc. AONR21357.pdf Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 7196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.44 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357 AONR21357 Hersteller : Alpha & Omega Semiconductor aonr21357.pdf Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357 AONR21357 Hersteller : Alpha & Omega Semiconductor aonr21357.pdf Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357 AONR21357 Hersteller : Alpha & Omega Semiconductor aonr21357.pdf Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C0755F991820&compId=AONR21357.pdf?ci_sign=d4f0ff370ccc60b45bc8785340c6a7611ba954d1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C0755F991820&compId=AONR21357.pdf?ci_sign=d4f0ff370ccc60b45bc8785340c6a7611ba954d1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH