AONR21357
Produktcode: 215468
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote AONR21357 nach Preis ab 0.53 EUR bis 1.85 EUR
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AONR21357 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/34A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
auf Bestellung 1271 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
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AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
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| AONR21357 | Hersteller : AOS |
MOSFET P-CH 30V 21A/34A 8DFN Група товару: Транзистори Од. вим: шт |
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AONR21357 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/34A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
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| AONR21357 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -32.5A Power dissipation: 12W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |