AONR21357 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 18+ | 1.02 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 2000+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AONR21357 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V.
Weitere Produktangebote AONR21357
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
AONR21357 Produktcode: 215468
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
|
|||
 |
AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
|
 |
AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
|
|
|
AONR21357 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
|
|
|
AONR21357 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/34A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
Produkt ist nicht verfügbar |
|
| AONR21357 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -32.5A Power dissipation: 12W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |