AONR32320C Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.20 EUR |
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Technische Details AONR32320C Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9.5A/12A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V, Power Dissipation (Max): 3.1W (Ta), 11W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V.
Weitere Produktangebote AONR32320C nach Preis ab 0.23 EUR bis 0.93 EUR
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AONR32320C | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9.5A/12A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
auf Bestellung 9847 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR32320C Produktcode: 180701
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Transistoren > MOSFET N-CH |
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AONR32320C | Hersteller : Alpha & Omega Semiconductor |
30V N-Channel MOSFET |
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AONR32320C | Hersteller : Alpha & Omega Semiconductor |
30V N-Channel MOSFET |
Produkt ist nicht verfügbar |
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| AONR32320C | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 36A; 4.5W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Power dissipation: 4.5W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A On-state resistance: 21mΩ Drain current: 12A Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| AONR32320C | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 36A; 4.5W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Kind of package: reel; tape Power dissipation: 4.5W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A On-state resistance: 21mΩ Drain current: 12A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |