AONR62818 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Power dissipation: 21.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 77+ | 0.93 EUR |
| 84+ | 0.86 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AONR62818 ALPHA & OMEGA SEMICONDUCTOR
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V, Power Dissipation (Max): 4.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V.
Weitere Produktangebote AONR62818
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
AONR62818 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 80V 18A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
|
| AONR62818 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V Power Dissipation (Max): 4.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V |
Produkt ist nicht verfügbar |