Technische Details AONR62818 Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V, Power Dissipation (Max): 4.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V.
Weitere Produktangebote AONR62818 nach Preis ab 0.7 EUR bis 1.18 EUR
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| AONR62818 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 AONR62818 SMD N channel transistors |
auf Bestellung 2043 Stücke: Lieferzeit 7-14 Tag (e) |
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AONR62818 | Hersteller : Alpha & Omega Semiconductor |
N-Channel MOSFET |
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| AONR62818 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V Power Dissipation (Max): 4.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V |
Produkt ist nicht verfügbar |