AONS21307 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
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Technische Details AONS21307 Alpha & Omega Semiconductor Inc.
Description: P, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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AONS21307 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -24A; 15W; DFN5x6 Mounting: SMD Drain current: -24A Drain-source voltage: -30V Gate charge: 17nC On-state resistance: 11mΩ Type of transistor: P-MOSFET Kind of channel: enhancement Power dissipation: 15W Gate-source voltage: ±25V Case: DFN5x6 Polarisation: unipolar |
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