AONS32302 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 56A/220A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details AONS32302 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 56A/220A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 119W (Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote AONS32302 nach Preis ab 1 EUR bis 3.25 EUR
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AONS32302 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 56A/220A 8DFN Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc) FET Type: N-Channel |
auf Bestellung 9196 Stücke: Lieferzeit 10-14 Tag (e) |
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| AONS32302 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 56A/220A 8DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 56A/220A 8DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc)
FET Type: N-Channel
auf Bestellung 9196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 11+ | 2.06 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |