AONS62614T Alpha & Omega Semiconductor
auf Bestellung 1866 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 225+ | 0.64 EUR |
| 226+ | 0.62 EUR |
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Technische Details AONS62614T Alpha & Omega Semiconductor
Description: MOSFET N-CH 60V 39A/100A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V.
Weitere Produktangebote AONS62614T nach Preis ab 1.78 EUR bis 5.28 EUR
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AONS62614T | Hersteller : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 60V 39A/100A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V |
auf Bestellung 2805 Stücke: Lieferzeit 10-14 Tag (e) |
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| AONS62614T | Hersteller : Alpha & Omega Semiconductor |
N Channel Trench Power MOSFET |
auf Bestellung 2042 Stücke: Lieferzeit 14-21 Tag (e) |
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AONS62614T | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 39A 8-Pin DFN EP T/R |
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AONS62614T | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 39A; 7.5W; DFN8 Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 7.5W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
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AONS62614T | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 39A/100A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V |
Produkt ist nicht verfügbar |
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AONS62614T | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 39A; 7.5W; DFN8 Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 7.5W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |