AONS66612

AONS66612 Alpha & Omega Semiconductor Inc.


AONS66612.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AONS66612 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 60V 46A/100A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V.

Weitere Produktangebote AONS66612 nach Preis ab 2.25 EUR bis 6.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor Inc. AONS66612.pdf Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 4301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.41 EUR
10+4.22 EUR
100+2.96 EUR
500+2.42 EUR
1000+2.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor aons66612.pdf Trans MOSFET N-CH 60V 100A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor aons66612.pdf Trans MOSFET N-CH 60V 46A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612 AONS66612 Hersteller : Alpha & Omega Semiconductor aons66612.pdf Trans MOSFET N-CH 60V 46A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612 AONS66612 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C114FD541820&compId=AONS66612.pdf?ci_sign=bee54307e65edcbe551d972fbc162aa48d1f7ccf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; DFN5x6
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 1.65mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 78nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN5x6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612 AONS66612 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C114FD541820&compId=AONS66612.pdf?ci_sign=bee54307e65edcbe551d972fbc162aa48d1f7ccf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; DFN5x6
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 1.65mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 78nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN5x6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH