AONS66612 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.17 EUR |
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Technische Details AONS66612 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A/100A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V.
Weitere Produktangebote AONS66612 nach Preis ab 2.25 EUR bis 6.41 EUR
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AONS66612 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A/100A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
auf Bestellung 4301 Stücke: Lieferzeit 10-14 Tag (e) |
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AONS66612 | Hersteller : Alpha & Omega Semiconductor |
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AONS66612 | Hersteller : Alpha & Omega Semiconductor |
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AONS66612 | Hersteller : Alpha & Omega Semiconductor |
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AONS66612 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; DFN5x6 Drain-source voltage: 60V Drain current: 100A On-state resistance: 1.65mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 78nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6 Anzahl je Verpackung: 3000 Stücke |
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AONS66612 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; DFN5x6 Drain-source voltage: 60V Drain current: 100A On-state resistance: 1.65mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 78nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: DFN5x6 |
Produkt ist nicht verfügbar |